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Molecular Beam Epitaxy (Topological Insulators)

The molecular-beam epitaxy system is an ultra-high vacuum system with a base pressure of 1x10-9 mbar. The system is equipped with Bi, Te, and Se effusion cells to grow the Bi2Te3 and Bi2Se3 epilayers. Typical growth rates are 5 – 20 nm/h. The system has a capacity of transferring substrates with a spatial extent up to 100 mm. In addition, a quadrupole mass spectrometer is provided to the system in order to monitor the Bi, Se, and Te fluxes during growth. Furthermore, a scanning tunnelling microscope (STM) is mounted, allowing in-situ STM scans of the surface with an atomic resolution.

MBE (topological insulators)