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Ionen Implantation

Axcelis Optima HDx and Axcelis 8250
The Optima HDx and Axcelis 8250 are automated implanters and comply with strict industrial requirements and clean room standards. Wafer handling is completely automated, using a robotic arm, which loads and unloads wafers from the transport boxes in the clean room (class 100). Wafers up to 300 mm are processed and small samples are mounted on adapter plates. The implantation energy can be as high as 750 keV, e.g. triple charged phosphorous, and as low as 200 eV for singly charged ions, e.g. boron. This especially permits the realization of ultra shallow implants for ultra shallow junction formation. Beam currents typically are 1 to 2 mA and the scanning system provides homogeneity better than 99% over an area of 300 mm dia. Both implanters are used for our nanoelectronic device developments and for all projects and cooperations with the semiconductor industry. Specifically the implanters are used for device doping with B, P and As, ion beam induced strain relaxation of epitaxial SiGe heterostructures with light ions or Si ions and H implantations for wafer splitting (SMART CUT), a useful process for wafer bonding.




Wafer sizeEnergy range
(single charged)
Max beam currentWafer coolingDoping Ions
Optima HDx200mm
200eV-60keV20mA15°CB, BF2, P, As, Si, H, H2
8250200mm1keV-250keV2mA-15°CB, BF2, P, As, Si, H, H2

EATON NV 3204 Ion Implanter

The Eaton is a "Medium Current Machine". Equipped with a Freeman- type source , it offers a very versatile and easy use and a wide spectrum of elements has been implanted successfully, see graph of the periodic table . The energy range includes 20 - 200 keV, for doubly charged ions even up to 400 keV. Samples can be mounted on heated or cooled sample holders, max. diameter is 10 cm. Typical beam currents are between 10 and 1000 µA. The NV3204 had been designed for the fabrication floor, but we use it as a very universal experimental research tool.

Eaton Fig1